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| KSD5062 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5062
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB=B 0.8A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
fT
Current-GainâBandwidth Product
IC= 1A; VCE= 10V
VECF
C-E Diode Forward Voltage
tf
Fall Time
IF= 5A
IC= 4A , IB1= 0.8A ; IB2= -1.6A
RL= 50Ω; VCC= 200V
MIN TYP. MAX UNIT
5.0
V
1.5
V
10 μA
40
200 mA
8
3
MHz
2.0
V
0.4 μs
isc Websiteï¼www.iscsemi.cn
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