IRFP9530 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc P-Channel MOSFET Transistor

INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
isc Product Specification
IRFP9530
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= -0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=- 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= -10V; ID= -6.5A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= -100V; VGS= 0
VSD
Forward On-Voltage
IS= -12A; VGS= 0
MIN MAX UNIT
-100
V
-2
-4
V
0.3
Ω
±500
nA
-250
μA
-6.3
V
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