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| IRFP450 Datasheet, PDF (2/2 Pages) STMicroelectronics – N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH] MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP450
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 7.9A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
VSD
Forward On-Voltage
IS= 14A; VGS= 0
MIN MAX UNIT
500
V
2
4
V
0.4
Ω
±100
nA
250
μA
1.4
V
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