IRFP352 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP352(R)
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= 10V; ID= 8A
VGS= ±20V;VDS= 0
VDS= 400V; VGS= 0
VDS= 320V; VGS= 0; Tj= 150℃
IS= 13A; VGS= 0
MIN MAX UNIT
400
V
2
4
V
0.4
Ω
±100
nA
250
1000
μA
1.5
V
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