IRFP240 Datasheet, PDF (2/2 Pages) Intersil Corporation – 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP240
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 10A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 200V; VGS= 0
VSD
Forward On-Voltage
IS= 18A; VGS= 0
MIN MAX UNIT
200
V
2
4
V
0.18
Ω
±100
nA
250
μA
2
V
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