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| IRFAC42R Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRFAC42R
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 3.4A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
VSD
Diode Forward Voltage
IF= 6.2A; VGS= 0
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS=250V,VGS=10V,
F=1.0MHz
MIN
TYP MAX UNIT
600
V
2
4
V
1.6
Ω
±100
nA
250
uA
1.5
V
1300
pF
160
pF
30
pF
·SWITCHING CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr
Rise Time
Td(off) Turn-off Delay Time
VDD=300V,ID=6.2A
RG=9.1Ω
Tf
Fall Time
MIN
TYP MAX UNIT
13
20
ns
18
27
ns
55
83
ns
20
30
ns
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