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| IRF750A Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – Advanced Power MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF750A
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 7.5A
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current VDS= 400V; VGS=0
VSD
Forward On-Voltage
IS= 15A; VGS=0
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
MIN TYP
MAX UNIT
400
V
2
4
V
0.3
Ω
±100 nA
10
uA
1.5
V
2140
2780
pF
305
350
pF
134
155
pF
·SWITCHING CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr
Rise Time
Td(off) Turn-off Delay Time
VDD=200V,ID=17A,
RG=6.2â¦
Tf
Fall Time
MIN
TYP MAX UNIT
20
50
ns
22
55
ns
100
210
ns
32
75
ns
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