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| IRF740 Datasheet, PDF (2/2 Pages) STMicroelectronics – N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF740
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 5A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 400V; VGS= 0
VSD
Diode Forward Voltage
IF= 10A; VGS= 0
MIN MAX UNIT
400
V
2
4
V
0.55
Ω
±500 nA
250
uA
2.2
V
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