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| IRF720FI Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF720FI
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
400
V
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
2
VGS= 10V; ID= 2A
VGS= ±20V;VDS= 0
4
V
1.8
Ω
±500
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 400V; VGS=0
250
uA
VSD
Forward On-Voltage
IS= 3A; VGS=0
1.6
V
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