IRF713 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF713
ELECTRICAL CHARACTERISTICS
T_C=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX UNIT
V_(BR)DSS Drain-Source Breakdown Voltage
V_GS= 0; I_D= 0.25mA
350
V
V_GS(th) Gate Threshold Voltage
R_DS(on) Drain-Source On-Resistance
I_GSS
Gate-Body Leakage Current
V_DS= V_GS; I_D= 0.25mA
2
V_GS= 10V; I_D= 1.1A
V_GS= ±20V;V_DS= 0
4
V
5.0
Ω
±500
nA
I_DSS
Zero Gate Voltage Drain Current
V_DS= 350V; V_GS=0
250
uA
V_SD
Forward On-Voltage
I_S= 2.0A; V_GS=0
1.6
V
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
V_DS=25V,V_GS=0V,
F=1.0MHz
135
pF
35
pF
8
pF
·SWITCHING CHARACTERISTICS (T_C=25℃)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr
Rise Time
Td(off) Turn-off Delay Time
V_DD=50V,I_D=5.6A
V_GS=10V,R_GEN=24Ω
R_GS=24Ω
Tf
Fall Time
MIN
TYP MAX UNIT
8
12
ns
10
15
ns
21
32
ns
11
17
ns
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