 English |
|
|
|
|
|
|
|
| IRF614 Datasheet, PDF (2/2 Pages) Intersil Corporation – 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF614
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 1.5A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 250V; VGS=0
VSD
Forward On-Voltage
IS= 2A; VGS=0
MIN MAX UNIT
250
V
2
4
V
2
Ω
±500
nA
250
uA
2.0
V
isc websiteï¼www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese