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| IRF420 Datasheet, PDF (2/2 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25â)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=1.4A
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS=0
VSD
Diode Forward Voltage
IF=2.5A; VGS=0
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr
Rise Time
td(on) Turn-on Telay Time
tf
Fall Time
ID=2.5A;
VDD=250V;
RG=18Ω
td(off) Turn-off Delay Time
isc Product Specification
IRF420
MIN TYPE MAX UNIT
500
V
2
4
V
3
Ω
±100 nA
250
uA
1.4
V
300
75
pF
20
10
15
12
18
ns
28
42
12
18
isc websiteï¼www.iscsemi.cn
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