FRM9130 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Second Generation Rad Hard MOSFET Results

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
FRM9130
·ELECTRICAL CHARACTERISTICS (T_C=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -1mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= -1mA
RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -4A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= -100V; VGS= 0
VSD
Diode Forward Voltage
IF= -6A; VGS= 0
MIN MAX UNIT
-100
V
-2.0
-4
V
0.55
Ω
100
nA
-1
mA
-1.8
V
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