FQPF8N60 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – N-Channel Mosfet Transistor

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
FQPF8N60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 3.75A
VGS= ±30V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
VSD
Forward On-Voltage
IS= 7.5A; VGS= 0
MIN MAX UNIT
600
V
2
4
V
1.2
Ω
±100
nA
1
μA
1.4
V
·
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