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| D45H10 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-10mA IB=0,
VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A
VBEsat Base-emitter saturation voltage
IC=-8A ;IB=-0.8A
ICES
Collector cut-off current
VCE=-80V; VBE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-2A ; VCE=-1V
hFE-2
DC current gain
IC=-4A ; VCE=-1V
fT
Transition frequency
IC=-0.5A ; VCE=-10V
Ccb
Collector capacitance
f=1MHz ; VCB=-10V
Switching times
ton
Turn-on time
ts
Storage time
IC=-5A IB1=- IB2=-0.5A
tf
Fall time
Product Specification
D45H10
MIN TYP. MAX UNIT
-80
V
-1.0
V
-1.5
V
-10
A
-0.1 mA
35
20
40
MHz
230
pF
135
ns
0.5
s
0.1
s
2
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