D45C5 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Low Saturation Voltage

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
D45C5
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCE_(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA
VBE_(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -100mA
ICES
Collector Cutoff Current
VCE= -55V, VBE= 0
-0.5 V
-1.3 V
-10 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-100 μA
hFE-1
DC Current Gain
IC= -0.2A; VCE= -1V
40
120
hFE-2
DC Current Gain
IC= -1A; VCE= -1V
20
fT
Current-Gain—Bandwidth Product I_C= -20mA;V_CE= -4V;f_test= 1MHz
Switching Times
40
MHz
t_r
Rise Time
t_s
Storage Time
t_f
Fall Time
IC= -1A; IB1= -IB2= -0.1A;
VCC= -20V
0.2 μs
0.6 μs
0.3 μs
isc website：www.iscsemi.cn
2