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D44H Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,30-80V,50W)
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
D44H Series
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCE(sat)
Collector-Emitter
Saturation Voltage
D44H10 IC= 8A ;IB= 0.8 A
D44H8,11 IC= 8A ;IB= 0.4 A
1
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 8A ;IB= 0.8 A
VCE=Rated VCEO;
VEB= 5V; IC= 0
1.5
V
10
μA
100 μA
D44H10
35
hFE-1
DC Current Gain
IC= 2A ; VCE= 1V
D44H8,11
60
D44H10
20
hFE-2
DC Current Gain
IC= 4A ; VCE= 1V
D44H8,11
40
COB
Output Capacitance
VCB= 10V,f= 0.1MHz
130
pF
fT
Current-Gain—Bandwidth Product IC= 0.5A;VCE= 10V;ftest=20MHz
50
MHz
Switching Times
ts
Storage Time
tf
Fall Time
IC= 5A; IB1= -IB2= 0.5A
VCC= 20V
0.5
μs
0.14
μs
isc Website:www.iscsemi.cn