D44C7 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Low Saturation Voltage

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
D44C7
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCE_(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 100mA
VBE_(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 100mA
ICES
Collector Cutoff Current
VCE= 70V, VBE= 0
0.5
V
1.3
V
10 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 0.2A; VCE= 1V
25
hFE-2
DC Current Gain
IC= 1A; VCE= 1V
10
fT
Current-Gain—Bandwidth Product I_C= 20mA;V_CE= 4V;f_test= 1MHz
Switching Times
50
MHz
t_r
Rise Time
t_s
Storage Time
t_f
Fall Time
IC= 1A; IB1= -IB2= 0.1A;
VCC= 20V
0.3 μs
0.7 μs
0.4 μs
isc website：www.iscsemi.cn
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