BUY70B Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUY70B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE_(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE_(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICEX
Collector Cutoff Current
VCE= 800V; VBE= -2V
hFE
DC Current Gain
IC= 1A; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
COB
Collector Output Capacitance
tf
Fall Time
IE= 0; VCB= 20V
IC= 4A; IB1= -IB2= 0.8A;
VCC= 40V
MIN TYP. MAX UNIT
325
V
800
V
8
V
5.0
V
1.5
V
1.0 mA
15
6
MHz
150 pF
1.0 μs
isc website：www.iscsemi.cn
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