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| BUX11 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX11
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0
200
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB=B 0.6A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A ;IB= 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 12A ;IB= 1.5A
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 160V; IB= 0
VCE= 250V;VBE= -1.5V
VCE= 250V;VBE= -1.5V;TC=125â
VEB= 5V; IC= 0
0.6
V
1.5
V
1.5
V
1.5 mA
1.5
6.0
mA
1.0 mA
hFE-1
DC Current Gain
IC= 6A; VCE= 2V
20
60
hFE-2
DC Current Gain
IC= 12A; VCE= 4V
10
fT
Current-GainâBandwidth Product IC= 1A; VCE= 15V, ftest= 10MHz
8
Switching Times
MHz
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 12A; IB1= 1.5A; VCC= 150V
IC= 12A; IB1= -IB2= 1.5A;
VCC= 150V
1.0 μs
1.8 μs
0.4 μs
isc Websiteï¼www.iscsemi.cn
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