BUW91 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUW91
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0; L= 25mH
200
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE_(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.15A
VCE_(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
VBE_(sat) Base-Emitter Saturation Voltage
ICER
Collector Cutoff Current
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 6A; IB= 0.6A
VCE= VCEV;RBE= 10Ω
VCE= VCEX;RBE= 10Ω; TC=100℃
VCE= VCEV; VBE= -1.5V
VCE= VCEV; VBE= -1.5V;TC=100℃
VEB= 5V; IC= 0
0.8 V
0.9 V
1.6 V
0.5
mA
2.5
0.5
mA
2.0
1.0 mA
Switching times; Resistive Load
t_r
Rise Time
t_s
Storage Time
t_f
Fall Time
IC= 8A; IB1= 1A; VCC= 160V;
VBB= -5V; RB= 2.5Ω; t_p= 30μs
0.5 μs
1.2 μs
0.3 μs
isc website：www.iscsemi.cn
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