 English |
|
|
|
|
|
|
|
| BUV48AFI Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV48AFI
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0; L= 25mH
450
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A
VCE (sat)-2 Collector-Emitter Saturation Voltage IC= 12A ;IB= 2.4A
VBE(sat) Base-Emitter Saturation Voltage
ICER
Collector Cutoff Current
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 8A; IB= 1.6A
VCE=rated VCER; RBE= 10Ω
VCE=rated VCER; RBE= 10Ω;TC=125â
VCE=rated VCES; VBE(off)= 1.5V
VCE=rated VCES; VBE(off)= 1.5V;TC=125â
VEB= 5V; IC= 0
1.5
V
5.0
V
1.6
V
0.5
mA
4.0
0.2
mA
2.0
1.0 mA
hFE
DC Current Gain
IC= 10A ; VCE= 5V
8
Switching times Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 8A ;IB1= 1.6A; VCC= 150V
IC= 8A ;IB1=-IB2= 1.6A; VCC= 150V
1.0 μs
3.0 μs
0.8 μs
isc websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese