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| BUT11AX Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUT11AX
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0
450
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 2.5A; IB= 0.5A
VCE= 1000V; VBE= 0
VCE= 1000V; VBE= 0; Tj= 125â
VEB= 9V; IC= 0
1.5
V
1.3
V
1.0
2.0
mA
10 mA
hFE-1
DC Current Gain
IC= 5mA ; VCE= 5V
10
35
hFE-2
DC Current Gain
IC= 0.5A ; VCE= 5V
10
35
Switching Times; Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 2.5A; IB1= -IB2= 0.5A
0.6
μs
3.5
μs
0.6
μs
isc Websiteï¼www.iscsemi.cn
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