BUJ303A Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUJ303A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0
500
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A; IB= 0.6A
VCE=RatedVCES ;VBE= 0
VCE=RatedVCES ;VBE= 0;TC=125℃
VEB= 9V; IC= 0
1.3
V
1
2
mA
0.1 mA
ICEO
Base Cutoff Current
VCE= 500V; IC= 0
0.1 mA
hFE-1
DC Current Gain
IC= 5mA ; VCE= 5V
10
35
hFE-2
DC Current Gain
IC= 0.5A ; VCE= 5V
14
35
Switching Times ;Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 2.5A; IB1= -IB2= 0.5A;
RL= 75Ω; VBB2= 4V
0.7 μs
4.0 μs
0.45 μs
Switching Times ;Resistive Load
ts
Storage Time
tf
Fall Time
IC= 2.5A; IB1= -IB2= 0.5A;
LB=1uH; -VBB= 5V
1.6 μs
160 ns
Switching Times ;Resistive Load
ts
Storage Time
tf
Fall Time
IC= 2.5A; IB1= -IB2= 0.5A;
LB=1uH; -VBB= 5V ；Tj=100℃
1.9 μs
200 ns
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