 English |
|
|
|
|
|
|
|
| BUH713 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
| |||
| ◁ |
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(sus) Collector-emitter sustaining voltage IC=100mA
VEBO
Emitter-base breakdown voltage
IE=10mA
VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.5A
VBEsat Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=7A ;IB=1.5A
VCE=1300V; VBE=0
Tj=125
VEB=5V; IC=0
hFE
DC current gain
IC=7A ; VCE=5V
Switching times
ts
Storage time
tf
Fall time
IC=7A;IB1=1.5A;IB2=3.5A;
VCC=400V
Product Specification
BUH713
MIN TYP. MAX UNIT
700
V
10
V
1.5
V
1.3
V
1
2
mA
100
A
8
2.1
3.1
s
140
210
ns
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese