BUH417D Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO(SUS) Collector-emitter sustaining voltage I_C=100mA ;I_B=0
V_CEsat Collector-emitter saturation voltage I_C=4A ; I_B=1A
V_BEsat Base-emitter saturation voltage
I_CES
Collector cut-off current
I_EBO
Emitter cut-off current
I_C=4A ; I_B=1A
V_CE=1700V_; V_BE=0
T_j=125
V_EB=5V; I_C=0
h_FE-1
DC current gain
I_C=1A ; V_CE=5V
h_FE-2
DC current gain
I_C=4A ; V_CE=5V
V_F
Diode forward voltage
I_F=4A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance from junction to case
Product Specification
BUH417D
MIN TYP. MAX UNIT
700
V
1.5
V
1.3
V
1.0
2.0
mA
200 mA
8
36
6
2
V
MAX
2.27
UNIT
/W
2