BUH313 Datasheet, PDF (2/3 Pages) STMicroelectronics – HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR

Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO(SUS) Collector-emitter sustaining voltage I_C=100mA; I_B=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=10mA; I_C=0
V_CEsat Collector-emitter saturation voltage I_C=3A ;I_B=0.75A
V_BEsat Base-emitter saturation voltage
I_C=3A ;I_B=0.75A
I_CES
Collector cut-off current
V_CE=1300V_; V_BE=0
I_EBO
Emitter cut-off current
V_EB=5V; I_C=0
h_FE-1
DC current gain
I_C=1A ; V_CE=5V
h_FE-2
DC current gain
I_C=3A ; V_CE=5V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance from junction to case
Product Specification
BUH313
MIN TYP. MAX UNIT
600
V
10
V
1.5
V
1.3
V
0.2 mA
0.1 mA
10
5.5
MAX
2.8
UNIT
/W
2