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| BUF405AFP Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUF405AFP
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=200mA ; IB=0; L=25mH
V(BR)EBO Emitter-base breakdwon voltage
IE=50mA ;IC=0
VCEsat-1
VCEsat-2
VBEsat-1
VBEsat-2
ICEV
Collector-emitter saturation voltage
IC=2.5A; IB=0.25A
TC=100
Collector-emitter saturation voltage
IC=5A ;IB=1A
TC=100
Base-emitter saturation voltage
IC=2.5A; IB=0.25A
TC=100
Base-emitter saturation voltage
IC=5A ;IB=1A
TC=100
Collector cut-off current
VCE=1000V; VBE=-1.5V
TC=100
IEBO
Emitter cut-off current
VEB=5V; IC=0
Switching times inductive load
ts
Storage time
tf
Fall time
IC=2.5A ;VCC=50V
IB1 =0.25A;VBB=-5V ;L=1mH
RBB=2.4 ;Vclamp=400V
MIN TYP. MAX UNIT
450
V
7
V
0.8
2.8
V
0.5
2.0
V
0.9
1.5
V
1.1
1.5
V
100
500
A
1
mA
0.8
s
0.05
s
2
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