BUD48A Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – High Voltage Capability

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUD48A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0; L= 25mH
450
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
IC= 8A; IB= 1.6A
VCE_(sat)-1 Collector-Emitter Saturation Voltage _{IC= 8A; IB= 1.6A;TC= 100℃}
VCE_(sat)-2 Collector-Emitter Saturation Voltage IC= 12A ;IB= 2.4A
VBE_(sat) Base-Emitter Saturation Voltage
ICER
Collector Cutoff Current
ICEX
Collector Cutoff Current
IC= 8A; IB= 1.6A
IC= 8A; IB= 1.6A;TC= 100℃
VCE=rated VCER; RBE= 10Ω
VCE=rated VCER; RBE= 10Ω;TC=125℃
VCE=rated VCES; VBE(_off)= 1.5V
VCE=rated VCES; VBE(_off)= 1.5V;TC=125℃
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
V
1.5
V
2.0
5.0
V
1.6
V
1.6
0.5
mA
4
0.2
mA
2
0.1 mA
hFE
DC Current Gain
IC= 8A ; VCE= 5V
8
COB
Output Capacitance
Switching times Resistive Load
IE= 0 ; VCB= 10V,f_test= 1MHz
350 pF
t_on
Turn-on Time
t_s
Storage Time
t_f
Fall Time
IC= 8A ;IB1=-IB2= 1.6A; VCC= 300V;
VBE(_off)= 5V,Duty Cycle≤2%
0.9 μs
3.6 μs
0.4 μs
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