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| BU941P Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACT ERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=10mH
VCEsat-1 Collector-emitter saturation voltage IC=8A; IB=0.1 A
VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=0.25 A
VCEsat-3 Collector-emitter saturation voltage IC=12A; IB=0.3 A
VBEsat-1 Base-emitter saturation voltage
IC=8A; IB=0.1 A
VBEsat-2 Base-emitter saturation voltage
IC=10A; IB=0.25 A
VBEsat-3 Base-emitter saturation voltage
ICES
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
IC=12A; IB=0.3 A
VCE =500V; VBE=0;
Tj=125
VCE =450V; IB=0;
Tj=125
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=10V
VF
Diode forward voltage
IF=10A
Product Specification
BU941P
MIN TYP. MAX UNIT
400
V
1.6
V
1.8
V
2.0
V
2.2
V
2.5
V
2.7
V
0.1
0.5
mA
0.1
0.5
mA
20
mA
300
2.5
V
2
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