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| BU932P Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU932P
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0
450
V
VCE(sat)
Collector-Emitter Saturation Voltage IC= 8A; IB=B 150mA
V BE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 8A; IB=B 150mA
VCE= 500V;VBE= 0
VCE= 500V;VBE= 0;Tj= 125â
VCE= 450V;IB= 0
1.8
V
2.2
V
1.0
5.0
mA
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
50
mA
hFE
DC Current Gain
IC= 5A ; VCE= 10V
300
VECF
C-E Diode Forward Voltage
IF= 10A
2.8
V
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