 English |
|
|
|
|
|
|
|
| BU826A Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU826A
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH
400
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 55mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.2A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 2.5A; IB= 55mA
VCE= RatedVCES; RBE= 0
VCE= RatedVCES; RBE= 0,TC= 125â
VEB= 8V; IC= 0
V
2.0 V
2.5 V
2.2 V
1.0
2.0
mA
150 mA
isc Websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese