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| BU810 Datasheet, PDF (2/2 Pages) STMicroelectronics – MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU810
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB=B 20mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.2A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 7A; IB=B 0.7A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2A; IB=B 20mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 4A; IB=B 0.2A
ICES
Collector Cutoff Current
VCE= 600V; VBE= 0
ICEO
Collector Cutoff Current
VCE= 400V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
VECF
C-E Diode Forward Voltage
IF= 7A
Switching Times, Resistive Load
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
IC= 2A; IB1= 20mA;VBE(off)= -5V
VClamp= 250V
MIN TYP. MAX UNIT
400
V
2
V
2.5 V
3
V
2.2 V
3
V
0.2 mA
1 mA
150 mA
3
V
0.6 μs
1.5 μs
0.5 μs
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