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| BU808 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU808
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ;IB=B 0; L=25 mH
700
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 9A; IB=B 4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 6A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 9A; IB=B 4A
VCE= VCESmax;VBE= 0
VCE= VCESmax;VBE= 0; TJ= 125â
VEB= 5V; IC=0
1
V
3
V
1.5
V
1
4
mA
10 mA
hFE
DC Current Gain
IC= 1A; VCE= 5V
8
IS/B
Second Breakdown Current
VCE= 100V; tp= 1 s
0.4
A
COB
Output Capacitance
fT
Current-GainâBandwidth Product
Switching Times
IE= 0; VCB= 10V, ftest= 1MHz
IC= 0.1A ; VCE= 5V, ftest= 5MHz
200
pF
7
MHz
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
IC= 9A; IB1= -IB2= 4A
1.5
μs
4.5
μs
0.5
μs
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