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| BU706D Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU706D
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB=B 0; L=25 mH
700
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 1.33A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A; IB=B 1.33A
VCE= VCESmax;VBE= 0
VCE= VCESmax;VBE= 0; TJ= 125â
VEB= 6V; IC=0
5.0
V
1.3
V
0.5
1.0
mA
10 mA
hFE
DC Current Gain
IC= 3A; VCE= 5V
2.25
VECF
C-E Diode Forward Voltage
IS/B
Second Breakdown Current
IF= 3A
VCE= 300V; tp= 200μs
1.5 2.2
V
1.0
A
Switching Times
tf
Fall Time
ts
Storage Time
IC= 3A; IB(end)= 1A; LB= 12μH
0.7
μs
6.5
μs
isc Websiteï¼www.iscsemi.cn
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