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| BU705F Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU705F
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0;L= 25mH
700
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.9A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 2A; IB=B 0.9A
VCE= VCESmax ; VBE= 0
VCE= VCESmax ; VBE= 0; TJ=125â
VEB= 5V ; IC= 0
5
V
1.3
V
0.15
1
mA
1
mA
hFE
DC Current Gain
IC= 2A ; VCE= 5V
2.2
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 0.1MHz
fT
Current-GainâBandwidth Product IC= 0.1A; VCE= 5V; ftest= 5MHz
Switching Times
65
pF
7
MHz
tstg
Storage Time
tf
Fall Time
IC= 2A ;IB(end)= 0.9A; LB= 15μH
7.5
μs
0.9
μs
isc Websiteï¼www.iscsemi.cn
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