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| BU608 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0
V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A
VBEsat Base-emitter saturation voltage
IC=6A ;IB=1.2A
ICBO
Collector cut-off current
VCB=400V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
Product Specification
BU608
MIN TYP. MAX UNIT
200
V
400
V
7
V
1.0 V
1.5 V
10
A
10
A
15
5
2
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