 English |
|
|
|
|
|
|
|
| BU536 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – SILICON NPN POWER TRANSISTOR | |||
| |||
| ◁ |
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0;
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0;
VCEsat Collector-emitter saturation voltage IC=4A;IB=0.8A
VBEsat Base-emitter saturation voltage
IC=4A;IB=0.8A
ICBO
Collector cut-off current
VCB=1100V;IE=0
IEBO
Emitter cut-off current
VEB=5V;IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
Product Specification
BU536
MIN TYP. MAX UNIT
480
V
7
V
5.0
V
1.5
V
1.0 mA
0.1 mA
10
5.5
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese