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| BU522A Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon Darlington NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon Darlington NPN Power Transistor
isc Product Specification
BU522A
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCER(SUS) Collector-Emitter Sustaining Voltage IC= 1.0A; RBE= 270Ω
VCE(sat)
Collector-Emitter Saturation Voltage IC= 4A; IB=B 80mA
VBE(sat) Base-Emitter Saturation Voltage
ICER
Collector Cutoff Current
IC= 4A; IB=B 80mA
VCR= 400V; RBE= 270Ω
ICBO
Collector Cutoff Current
VCB= 450V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 2.5A; VCE= 5V
fT
Current-GainâBandwidth Product IC= 0.3A; VCE= 5V
MIN TYP. MAX UNIT
400
V
2.0
V
2.5
V
1.0 mA
1.0 mA
40 mA
250
7.5
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 0.1MHz
150
pF
isc Websiteï¼www.iscsemi.cn
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