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| BU506 Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon diffused power transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=1.33A
VBEsat Base-emitter saturation voltage
IC=3A; IB=1.33A
hFE
DC current gain
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=0.1A ; VCE=5V
VCE=rated; VBE=0
TC=125
VEB=6V; IC=0
Switching times
ts
Storage time
tf
Fall time
ICM = 3 A; IB(end) = 1A
LB = 12 H
Product Specification
BU506
MIN TYP. MAX UNIT
700
V
1.0
V
1.3
V
6
13
30
0.5
1.0
mA
10
mA
6.5
s
0.7
s
2
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