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| BU4530AW Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU4530AW
ELECTRICAL CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0; L= 25mH
800
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A ;IB= 2.22A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
hFE-1
DC Current Gain
IC= 10A ;IB= 2.22A
VCEV=1500V,VBE(off)=0
VCEV=1500V,VBE(off)=0;TC=125â
IC= 1A ; VCE= 5V
3.0
V
1.01 V
1.0
2.0
mA
12
hFE-2
DC Current Gain
IC= 10A ; VCE= 5V
4.8
8.5
Switching times; Resistive load
ts
Storage Time
tf
Fall Time
IC= 9A; IB1= 1.8A; IB2= -4.5A
3.0 4.0 μs
0.20 0.26 μs
isc Websiteï¼www.iscsemi.cn
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