 English |
|
|
|
|
|
|
|
| BU4506AX Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU4506AX
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.75A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A; IB=B 0.75A
VCE= 1500V; VBE= 0
VCE= 1500V; VBE= 0; TC=125â
VEB= 7.5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 5V
hFE-2
DC Current Gain
Switching times (16kHz line deflection circuit)
tstg
Storage Time
tf
Fall Time
IC= 3A; VCE= 5V
IC= 3A, IB1= 0.6A; IB2= -1.5A
MIN TYP. MAX UNIT
800
V
7.5
V
3.0
V
0.98 V
1.0
2.0
mA
1.0 mA
10
4.2
7.3
4.6 μs
0.45 μs
isc Websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese