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| BU433 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU433
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB=B 0; L= 25mH
375
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=B 1.25A
3.0
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.5A
1.4
V
VBE(sat)-2 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4A; IB=B 1.25A
VCEM=900V;VBE= 0
VCEM=900V;VBE= 0;TJ=125â
VEB= 10V; IC=0
1.6
V
1.0
2.0
mA
10 mA
hFE
DC Current Gain
IC= 0.6A ; VCE= 5V
40
fT
Current Gain-Bandwidth Product
Switching Times
IC= 0.2A ; VCE= 10V;ftest= 1MHz
6
MHz
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 2.5A; IB1= 0.5A; IB2= -1A;
VCC= 250V
0.5 0.6 μs
2.0 3.5 μs
0.45 0.7 μs
isc Websiteï¼www.iscsemi.cn
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