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| BU407H Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,150-200V,60W) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU407H
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.8A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 5A; IB=B 0.8A
VCE= 330V; VBE= 0
VCE= 200V; VBE= 0
VEB= 6V; IC=0
fT
Current-GainâBandwidth Product IC= 0.5A ; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
tf
Fall Time
IC= 5A; IBend= 0.8A, VCC= 40V
150
V
1.0 V
1.2 V
5.0
0.1
mA
1.0 mA
10
MHz
80
pF
0.75 μs
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