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| BU406H Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU406H
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0
200
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.8A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 5A; IB=B 0.5A
VCE= 400V; VBE= 0
VCE=250V; VBE= 0
VCE=250V; VBE= 0;TC= 150â
VEB= 6V; IC= 0
fT
Current-GainâBandwidth Product IC= 0.5A; VCE= 10V
10
tf
Fall Time
IC= 5A; IB1= -IB2= 0.8A
V
1.0 V
1.2 V
5.0
0.1 mA
1.0
1.0 mA
MHz
0.4 μs
isc Websiteï¼www.iscsemi.cn
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