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| BU323A Datasheet, PDF (2/2 Pages) Motorola, Inc – 16 AMPERE PEAK POWER TRANSISTOR DARLINGTON NPN SILICON 400 VOLTS 175 WATTS | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU323A
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 10mH
400
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB=B 60mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6 A; IB= 120mA
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB=B 300mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 6 A; IB= 120mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 10 A; IB=B 300mA
VBE(on) Base-Emitter On Voltage
IC= 10A ; VCE= 6V
ICER
Collector Cutoff Current
VCER= RatedVCER;RBE= 100Ω
1.5
V
1.7
V
2.7
V
2.2
V
3.0
V
2.5
V
1.0 mA
ICBO
Collector Cutoff Current
VCB= RatedVCBO; IE= 0
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
40
mA
hFE-1
DC Current Gain
IC= 3A ; VCE= 6V
300
hFE-2
DC Current Gain
IC= 6A ; VCE= 6V
150
2000
hFE-3
DC Current Gain
IC= 10A ; VCE= 6V
50
VECF
C-E Diode Forward Voltage
IF= 10A
3.5
V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 100kHz
165
pF
Switching Times
ts
Storage Time
tf
Fall Time
VCC= 12V; IC= 6A,
IB1= -IB2= 0.3A
15
μs
15
μs
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