 English |
|
|
|
|
|
|
|
| BU2727DX Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2727DX
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.91A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
hFE-1
DC Current Gain
IC= 5A; IB=B 0.91A
VCE= 1700V; VBE= 0
VCE= 1700V; VBE= 0; TC=125â
IC= 1A; VCE= 5V
1.0
V
1.0
V
1.0
2.0
mA
22
hFE-2
DC Current Gain
IC= 5A; VCE= 1V
5.5
11
isc Websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese