 English |
|
|
|
|
|
|
|
| BU2725DW Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2725DW
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB=B 1.75A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 7A; IB=B 1.75A
VCE= 1700V ; VBE= 0
VCE= 1700V ; VBE= 0; TC=125â
VEB= 7.5V ; IC= 0
1.0
V
0.95 V
1.0
2.0
mA
110
mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
19
hFE-2
DC Current Gain
VECF
C-E Diode Forward Voltage
IC= 7A ; VCE= 1V
IF= 7A
3.8
7.8
2.2
V
isc Websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese