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| BU2720DX Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2720DX
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.5A; IB= 1.38A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
hFE-1
DC Current Gain
IC= 5.5A; IB= 1.38A
VCE= 1700V ; VBE= 0
VCE= 1700V ; VBE= 0; TC=125â
IC= 1A ; VCE= 5V
1.0
V
1.0
V
1.0
2.0
mA
19
hFE-2
DC Current Gain
VECF
C-E Diode Forward Voltage
IC= 5.5A ; VCE= 1V
IF= 5.5A
4
7.5
1.6
V
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