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| BU2720DF Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5.5A ;IB=1.38 A
VBEsat Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=5.5A ;IB=1.38 A
VCE=BVCES; VBE=0
Tj=125
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=5.5A ; VCE=1V
Product Specification
BU2720DF
MIN TYP. MAX UNIT
825
V
7.5
V
1.0
V
1.0
V
1.0
2.0
mA
100
300
mA
22
4
5.5
7.5
2
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